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LHF00L28
LHF00L28
16Mbit (1Mbit × 16)
Flash MEMORY
2
16-M density with 16-bit I/O Interface
Read Operation
? 70ns
Low Power Operation
? 2.7V Read and Write Operations
? Automatic Power Savings Mode reduces I CCR
in Static Mode
Enhanced Code + Data Storage
? 5 μ s Typical Erase/Program Suspends
OTP (One Time Program) Block
? 4-Word Factory-Programmed Area
? 4-Word User-Programmable Area
Operating Temperature -40 ° C to +85 ° C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
? Eight 4-Kword Parameter Blocks
? One 32-Kword Block
? Fifteen 64-Kword Blocks
? Top Parameter Location
Enhanced Data Protection Features
? Individual Block Lock and Block Lock-Down with
Zero-Latency
? All blocks are locked at power-up or device reset.
? Block Erase, Full Chip Erase, Word Program Lockout
during Power Transitions
Automated Erase/Program Algorithms
? 3.0V Low-Power 10μ s/Word (Typ.)
Programming
? 12.0V No Glue Logic 9 μ s/Word (Typ.)
Production Programming and 0.8s Erase (Typ.)
Cross-Compatible Command Support
? Basic Command Set
? Common Flash Interface (CFI)
Extended Cycling Capability
? Minimum 100,000 Block Erase Cycles
48-Lead TSOP (Normal Bend)
ETOX TM* Flash Technology
Not designed or rated as radiation hardened
The product is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications.
The product can operate at V CC =2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable
applications.
The memory array block architecture utilizes Enhanced Data Protection features, which provides maximum flexibility for
safe nonvolatile code and data storage.
Special OTP (One Time Program) block provides an area to store permanent code such as an unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.45
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